Observation of the transition of coherent/sequential electron tunneling in a resonant tunneling regime of a GaAs/AlAs three-terminal quantum-well heterostructure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1595149
Reference15 articles.
1. Tunneling in a finite superlattice
2. Frequency limit of double‐barrier resonant‐tunneling oscillators
3. Frequency limit of double‐barrier resonant‐tunneling oscillators
4. Charge accumulation in a double-barrier resonant-tunneling structure studied by photoluminescence and photoluminescence-excitation spectroscopy
5. Charge accumulation in a double-barrier resonant-tunneling structure studied by photoluminescence and photoluminescence-excitation spectroscopy
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1. Effect of electron-optical phonon interaction on resonant tunneling in coupled quantum wells;The European Physical Journal B;2012-04
2. Electron-phonon bound states and impurity band formation in quantum wells;Physical Review B;2009-04-03
3. Effect of Bias Step on the I – V Curve in Double-Barrier AlGaAs/GaAs/AlGaAs Resonant-Tunnelling Devices;Chinese Physics Letters;2006-03-30
4. Electron transport properties through double-barrier structures sandwiching a wide band-gap layer;Physica E: Low-dimensional Systems and Nanostructures;2006-03
5. Multiple-frequency current oscillations in GaAs-AlGaAs quantum wells containing a thin semi-insulating layer;The European Physical Journal B;2005-10
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