On the frequency response of a resonant-cavity-enhanced separate absorption, grading, charge, and multiplication avalanche photodiode
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1521786
Reference30 articles.
1. Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz
2. Resonant-cavity separate absorption, charge and multiplication avalanche photodiodes with high-speed and high gain-bandwidth product
3. High-speed >90% quantum-efficiency p–i–n photodiodes with a resonance wavelength adjustable in the 795–835 nm range
4. Resonant cavity enhanced photonic devices
5. Ultrawide-band/high-frequency photodetectors
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1. Temperature dependence simulation and characterization for InP/InGaAs avalanche photodiodes;Frontiers of Optoelectronics;2018-12
2. Performance of Graded Bandgap HgCdTe Avalanche Photodiode;IEEE Transactions on Electron Devices;2017-03
3. Comparison of waveguide avalanche photodiodes with InP and InAlAs multiplication layer for 25 Gb/s operation;Optical Engineering;2014-04-28
4. The Design of Polarization Insensitive Avalanche Photodiode for 100-Gb/s (4×25 Gb/s) Optical Transmission;Asia Communications and Photonics Conference 2013 Postdeadline;2013
5. Modeling multi-channel optical links using OptiSPICE for WDM systems;SPIE Proceedings;2010-04-23
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