Spatially resolved observation of carrier leakage in 1.3‐μm In1−xGaxAsyP1−ylasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94818
Reference8 articles.
1. Analysis of threshold temperature characteristics for InGaAsP/InP double heterojunction lasers
2. The Temperature Dependence of the Efficiency and Threshold Current of In1-xGaxAsyP1-yLasers Related to Intervalence Band Absorption
3. Temperature Sensitive Threshold Current of InGaAsP–InP Double Heterostructure Lasers
4. Three-layer 1.3 µm In<inf>1-x</inf>Ga<inf>x</inf>As<inf>y</inf>P<inf>1-y</inf>lasers with quaternary confining layers
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. ADVANCES IN MEASUREMENTS OF PHYSICAL PARAMETERS OF SEMICONDUCTOR LASERS;International Journal of High Speed Electronics and Systems;1998-12
2. On the origin of the carrier leakage in GaInAsP/InP double‐heterojunction lasers;Journal of Applied Physics;1990-03
3. Characterization and Design of Semiconductor Lasers Using Strain;Band Structure Engineering in Semiconductor Microstructures;1989
4. On the effects of Auger recombination and energetic carrier leakage in GaInAsP/InP light emitting diodes;Journal of Applied Physics;1988-08-15
5. A theoretical analysis of Auger recombination induced energetic carrier leakage in GaInAsP/InP double heterojunction lasers and light emitting diodes;Journal of Applied Physics;1988-05
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