Fabrication and structure of epitaxial terbium silicide on Si(111)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347696
Reference19 articles.
1. Surface crystallography ofYSi2−xfilms epitaxially grown on Si(111): An x-ray photoelectron diffraction study
2. Epitaxial growth of rare‐earth silicides on (111) Si
3. Fabrication and structure of epitaxial Er silicide films on (111) Si
4. Epitaxial growth of ErSi2 on (111) Si
5. Formation of epitaxial yttrium silicide on (111) silicon
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1. Terbium induced nanostructures on Si(111);Surface Science;2015-07
2. Interfaces;Materials Science and Technology;2013-02-15
3. Nanowires of four epitaxial hexagonal silicides grown on Si(001);Journal of Applied Physics;2002-03
4. The luminescence of LaSi2−x formed by ion beam synthesis in (111) silicon wafer;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-02
5. Vacancy ordering structures in epitaxial RESi2−x thin films on (111)Si and (001)Si;Applied Surface Science;1997-04
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