Molecular-beam epitaxy growth and nitrogen doping of ZnSe1−xTex alloys grown on InP substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125093
Reference10 articles.
1. Doping in ZnSe, ZnTe, MgSe, and MgTe wide-band-gap semiconductors
2. Doping of zinc‐selenide‐telluride
3. Red–green–blue photopumped lasing from ZnCdMgSe/ZnCdSe quantum well laser structures grown on InP
4. Molecular beam epitaxy of Zn(Se,Te) alloys and superlattices
5. Evolution of the band gap and the dominant radiative recombination center versus the composition for ZnSe1−xTexalloys grown by molecular beam epitaxy
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1. Nitrogen stabilizes the wurtzite polymorph in ZnSe1−xTex thin films;Journal of Materials Chemistry C;2022
2. Ab initio study of structural and electronic properties of single crystal and core/shell II-VI semiconductor nanowires;Computational Materials Science;2016-10
3. Ternary semiconductor ZnSe 0.7 Te 0.3 nanowires;Micro & Nano Letters;2013-08
4. Influence of γ-irradiation on optical parameters of electron beam evaporated ZnSe1−xTexnanocrystalline thin films;Radiation Effects and Defects in Solids;2013-06-26
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