Separation of charge transfer and surface recombination processes by simultaneous measurement of photocurrent and excess microwave conductivity profiles of Si(111) in NH4F-Reference-Cited by-同舟云学术

Separation of charge transfer and surface recombination processes by simultaneous measurement of photocurrent and excess microwave conductivity profiles of Si(111) in NH4F

Published:1994-04 Issue:7 Volume:75 Page:3544-3547
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lewerenz H. J.,Schlichthörl G.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.356090

Reference21 articles.

1. Oxide optimization at thep‐Si/aqueous electrolyte interface

2. Surface chemistry of HF passivated silicon: X‐ray photoelectron and ion scattering spectroscopy results

3. Unusually Low Surface-Recombination Velocity on Silicon and Germanium Surfaces

4. Deconvolution of Charge Injection Steps in Quantum Yield Multiplication on Silicon

5. In SituCharacterization of the Illuminated Silicon-Electrolyte Interface by Fourier-Transform Infrared Spectroscopy

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