Thickness dependence of switching time and coercive field in ferroelectric thin films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3576110
Reference44 articles.
1. Ferroelectric Memories
2. Physics of thin-film ferroelectric oxides
3. Domain Formation and Domain Wall Motions in Ferroelectric BaTiO3Single Crystals
4. Switching Time in Ferroelectric BaTiO3 and Its Dependence on Crystal Thickness
5. Velocity of Sidewise 180° Domain-Wall Motion in BaTiO3as a Function of the Applied Electric Field
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