Picosecond dynamics of photoexcited carriers in silicon nanocrystal/Si3N4 superlattices: Presence of K0 centers-Reference-Cited by-同舟云学术

Picosecond dynamics of photoexcited carriers in silicon nanocrystal/Si3N4 superlattices: Presence of K0 centers

Published:2015-03-07 Issue:9 Volume:117 Page:093101
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kořínek M.¹,Trojánek F.¹,Hiller D.²,Gutsch S.²,Zacharias M.²,Malý P.¹

Affiliation:

1. Department of Chemical Physics and Optics, Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, 121 16 Prague, Czech Republic

2. Department of Nanotechnology, IMTEK, Faculty of Engineering, Albert-Ludwigs-University Freiburg, Georges-Köhler-Allee 103, 79110 Freiburg, Germany

Funder

Charles University in Prague

Czech Science Foundation (Grantová agentura Ceské republiky)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4913717

Reference20 articles.

1. Silicon quantum dot nanostructures for tandem photovoltaic cells

2. Pb(0) centers at the Si-nanocrystal/SiO2 interface as the dominant photoluminescence quenching defect

3. Silicon quantum dot superlattices: Modeling of energy bands, densities of states, and mobilities for silicon tandem solar cell applications

4. Improved nanocrystal formation, quantum confinement and carrier transport properties of doped Si quantum dot superlattices for third generation photovoltaics

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