Domain wall-magnetic tunnel junction spin–orbit torque devices and circuits for in-memory computing-Reference-Cited by-同舟云学术

Domain wall-magnetic tunnel junction spin–orbit torque devices and circuits for in-memory computing

Published:2021-03-15 Issue:11 Volume:118 Page:112401
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Alamdar Mahshid¹^ORCID,Leonard Thomas¹^ORCID,Cui Can¹^ORCID,Rimal Bishweshwor P.¹,Xue Lin²,Akinola Otitoaleke G.¹^ORCID,Patrick Xiao T.³^ORCID,Friedman Joseph S.⁴^ORCID,Bennett Christopher H.³^ORCID,Marinella Matthew J.³^ORCID,Incorvia Jean Anne C.¹^ORCID

Affiliation:

1. Electrical and Computer Engineering Department, University of Texas at Austin, Austin, Texas 78712, USA

2. Applied Materials, Santa Clara, California 95054, USA

3. Sandia National Laboratories, Albuquerque, New Mexico 87123, USA

4. Electrical and Computer Engineering Department, University of Texas at Dallas, Richardson, Texas 75080, USA

Funder

Sandia National Laboratories

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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