Author:
Larrabee R. D.,Hicinbothem W. A.
Subject
Physics and Astronomy (miscellaneous)
Reference3 articles.
1. A convenient summary of the use of gallium arsenide for Gunn effect devices and avalanche (Read) diodes and references to the work of many authors can be found in the special issue of the IEEE Transactions on Electron Devices devoted to Semiconductor Bulk‐Effect and Transit‐Time Devices,ED‐13, No. 1 (January 1966).IETDAI0018-9383
2. Au-n-Type GaAs Schottky Barrier and Its Varactor Application
3. Determination of the Effective Ionic Charge of Gallium Arsenide from Direct Measurements of the Dielectric Constant
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