RESONANCE BEHAVIOR OF THE DIELECTRIC CONSTANT OF GaAs AT MICROWAVE FREQUENCIES

Author:

Larrabee R. D.,Hicinbothem W. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference3 articles.

1. A convenient summary of the use of gallium arsenide for Gunn effect devices and avalanche (Read) diodes and references to the work of many authors can be found in the special issue of the IEEE Transactions on Electron Devices devoted to Semiconductor Bulk‐Effect and Transit‐Time Devices,ED‐13, No. 1 (January 1966).IETDAI0018-9383

2. Au-n-Type GaAs Schottky Barrier and Its Varactor Application

3. Determination of the Effective Ionic Charge of Gallium Arsenide from Direct Measurements of the Dielectric Constant

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1. Roles of Electromagnetically-Enhanced Free Energy on Non-Thermal Microwave Effects in Materials Processing - A Review and Discussion;Processing, Properties, and Design of Advanced Ceramics and Composites: Ceramic Transactions;2016-09-26

2. Understanding Non-Thermal Microwave Effects in Materials Processing - a Classical Non-Quantum Approach;Ceramic Transactions Series;2014-10-03

3. Complex Permittivity of GaAs and CdTe at Microwave Frequencies;IEEE Transactions on Microwave Theory and Techniques;1977-08

4. Chapter 4 Far-Infrared Photoconductivity in High Purity GaAs;Semiconductors and Semimetals;1977

5. Diode de Gunn, composant de radar portatif;Annales des Télécommunications;1971-01

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