Growth and characterization of Zn1−xMnxTe epilayers grown by hot wall epitaxy on (001)GaAs substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107028
Reference10 articles.
1. Spin separation in diluted magnetic semiconductor quantum well systems (invited)
2. Molecular beam epitaxy of Cd1−xMnxTe
3. Wide gap II‐VI superlattices of ZnSe‐Zn1−xMnxSe
4. Molecular beam epitaxy of diluted magnetic semiconductor (Cd1−xMnxTe) superlattices
5. Cd1−xMnxTe‐CdTe multilayers grown by molecular beam epitaxy
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1. The spin effect in zinc-blende and diluted magnetic semiconductors: FP-LAPW study;Physica B: Condensed Matter;2010-01
2. Growth of Zn1−Mn Te films on GaAs(1 0 0) by hot-wall epitaxy;Applied Surface Science;2003-05
3. Effect of Mn concentration on photoluminescence characteristics of Zn1–xMnxTe epilayers;Thin Solid Films;2003-02
4. Structural and optical properties of Zn1−xMnxTe epilayers as diluted magnetic II–VI semiconductors;Journal of Crystal Growth;2002-04
5. Determination of the three-dimensional crystallographic misorientation in heterostructures by selected area diffraction (SAD) in cross-sectional TEM;Journal of Crystal Growth;2000-05
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