Current‐induced defect creation and recovery in hydrogenated amorphous silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106351
Reference16 articles.
1. Reversible conductivity changes in discharge‐produced amorphous Si
2. Creation of near-interface defects in hydrogenated amorphous silicon-silicon nitride heterojunctions: The role of hydrogen
3. Influence of bias and photo stress on a-Si:H diodes with nin- and pip-structures
4. Influence of bias and photo stress on a-Si:H diodes with nin- and pip-structures
5. Influence of bias and photo stress on a-Si:H diodes with nin- and pip-structures
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