Tuning the analog synaptic properties of forming free SiO2 memristors by material engineering
Author:
Affiliation:
1. Department of Applied Physics, National Technical University of Athens, Iroon Polytechniou 9 Zografou, 15780 Athens, Greece
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0044647
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