TEM observation in cross section of defects in a long‐term‐degraded Ga1−xAlxAs double‐heterostructure injection laser diode
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.325141
Reference11 articles.
1. Defect structure introduced during operation of heterojunction GaAs lasers
2. Nature of optically induced defects in Ga1−xAlxAs–GaAs double‐heterojunction laser structures
3. Rapid degradation phenomenon in heterojunction GaAlAs–GaAs lasers
4. Defect structure of degraded heterojunction GaAlAs−GaAs lasers
5. Defect structure of degraded GaAlAs-GaAs double heterojunction lasers
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Degradation related defects in visible lasers;Journal of Crystal Growth;1995-03
2. Degradation in GaAs/AlGaAs double‐heterostructure light‐emitting diodes;Applied Physics Letters;1987-12-07
3. Positive feedback model of defect formation in gradually degraded GaAlAs light emitting devices;IEEE Transactions on Electron Devices;1983-04
4. Formation of defects in the active region of heterolasers and variation of internal parameters;Journal of Applied Spectroscopy;1981-08
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