Enhancement of resistive switching properties in nitride based CBRAM device by inserting an Al2O3 thin layer-Reference-Cited by-同舟云学术

Enhancement of resistive switching properties in nitride based CBRAM device by inserting an Al2O3 thin layer

Published:2017-05-15 Issue:20 Volume:110 Page:203102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kumar Dayanand¹,Aluguri Rakesh¹,Chand Umesh¹,Tseng Tseung-Yuen¹

Affiliation:

1. Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4983465

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2. Memristive devices for computing

3. Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer

4. Investigation of thermal stability and reliability of HfO2 based resistive random access memory devices with cross-bar structure

5. Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance

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