Enhancement of resistive switching properties in nitride based CBRAM device by inserting an Al2O3 thin layer
Author:
Affiliation:
1. Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4983465
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3. Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer
4. Investigation of thermal stability and reliability of HfO2 based resistive random access memory devices with cross-bar structure
5. Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance
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