Material and device properties of GaAs on sapphire grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337680
Reference9 articles.
1. SINGLE‐CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATES
2. The use of metalorganics in the preparation of semiconductor materials: Growth on insulating substrates
3. Crystal growth and defect characterization of heteroepitaxial III–V semiconductor films
4. Heteroepitaxial GaAs on Aluminum Oxide: Electrical Properties of Undoped Films
5. The Use of Metal-Organics in the Preparation of Semiconductor Materials
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