Strong influence of SiO2 thin film on properties of GaN epilayers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123378
Reference7 articles.
1. InGaN Laser Diode Grown on 6H-SiC Substrate Using Low-Pressure Metal Organic Vapor Phase Epitaxy
2. Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
3. Metastability of Oxygen Donors in AlGaN
4. Post growth rapid thermal annealing of GaN: The relationship between annealing temperature, GaN crystal quality, and contact-GaN interfacial structure
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