Enhancement of magnetic coercivity and ferromagnetic transition temperature by proximity effects in the GaMnAs–ZnMnSe multilayer system-Reference-Cited by-同舟云学术

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Enhancement of magnetic coercivity and ferromagnetic transition temperature by proximity effects in the GaMnAs–ZnMnSe multilayer system

Published:2001-10-08 Issue:15 Volume:79 Page:2414-2416
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu X.,Sasaki Y.,Furdyna J. K.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1409587

Reference11 articles.

1. Making Nonmagnetic Semiconductors Ferromagnetic

2. Electrical spin injection in a ferromagnetic semiconductor heterostructure

3. Electric-field control of ferromagnetism

4. Ferromagnetic Order Induced by Photogenerated Carriers in Magnetic III-V Semiconductor Heterostructures of (In,Mn)As/GaSb

5. Exchange Anisotropy—A Review

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2. Magnetic coupling in ferromagnetic semiconductor GaMnAs/AlGaMnAs bilayer devices;Science China Physics, Mechanics & Astronomy;2014-06-20

3. Measurement of magnetization of Ga 1−x Mn x As by ferromagnetic resonance;Journal of Magnetism and Magnetic Materials;2014-06

4. III–V-Based Ferromagnetic Semiconductors;Nanomagnetism and Spintronics;2014

5. Characterization and local magnetic modification of ion irradiated GaMnAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-11

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