High-mobility thin InSb films grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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High-mobility thin InSb films grown by molecular beam epitaxy

Published:2004-05-31 Issue:22 Volume:84 Page:4463-4465
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang T.,Clowes S. K.,Debnath M.,Bennett A.,Roberts C.,Harris J. J.,Stradling R. A.,Cohen L. F.,Lyford T.,Fewster P. F.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1748850

Reference14 articles.

1. Enhanced Room-Temperature Geometric Magnetoresistance in Inhomogeneous Narrow-Gap Semiconductors

2. Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording

3. Electron spin lifetimes in long-wavelengthHg1−xCdxTeand InSb at elevated temperature

4. Growth of InSb and InAs1−xSbxon GaAs by molecular beam epitaxy

5. Molecular‐beam epitaxial growth of high‐quality InSb on InP and GaAs substrates

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