Characterizing intra-exciton Coulomb scattering in terahertz excitations-Reference-Cited by-同舟云学术

Characterizing intra-exciton Coulomb scattering in terahertz excitations

Published:2014-11-17 Issue:20 Volume:105 Page:201109
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zybell S.¹²,Bhattacharyya J.¹,Winnerl S.¹,Eßer F.¹²,Helm M.¹²,Schneider H.¹,Schneebeli L.³,Böttge C. N.³^ORCID,Kira M.³,Koch S. W.³,Andrews A. M.⁴,Strasser G.⁴

Affiliation:

1. Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany

2. Technische Universität Dresden, 01062 Dresden, Germany

3. Department of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg, Germany

4. Institute for Solid State Electronics and Center for Micro- and Nanostructures, Vienna University of Technology, Floragasse 7, 1040 Vienna, Austria

Funder

Deutsche Forschungsgemeinschaft (DFG)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4902431

Reference23 articles.

1. Resonant enhancement of second order sideband generation for intraexcitonic transitions in GaAs/AlGaAs multiple quantum wells

2. Observation of the Intraexciton Autler-Townes Effect inGaAs/AlGaAsSemiconductor Quantum Wells

3. Experimental observation of electron–hole recollisions

4. Ionization of coherent excitons by strong terahertz fields

5. Exciton-Population Inversion and Terahertz Gain in Semiconductors Excited to Resonance

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