Impurity incorporation in vapor phase epitaxy: S in GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359233
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5. A study of group‐V desorption from GaAs and GaP by reflection high‐energy electron diffraction in gas‐source molecular beam epitaxy
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1. Impurity incorporation during epitaxial growth of GaAs by chemical reaction;Journal of Crystal Growth;2000-09
2. Trapping of impurity molecules in condensation from mixtures of gases;International Journal of Heat and Mass Transfer;2000-02
3. Indium phosphide vapor phase epitaxy at high growth rates, growth kinetics, and characterization;Journal of Applied Physics;1998-08
4. Defects in Thick Epitaxial GaAs Layers;Materials Science Forum;1997-12
5. Growth and characterization of thick epitaxial GaAs layers;Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors;1997
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