Indentation of Germanium at Room Temperature
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1713232
Reference7 articles.
1. A Metallographic Investigation of the Damaged Layer in Abraded Germanium Surfaces
2. Some defects in crystals grown from the melt - I. Defects caused by thermal stresses
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1. Slip systems in silicon carbide 15R;Materials Letters;1988-02
2. In situ X-raytopographic studies of the generation and the multiplication processes of dislocations in silicon crystals at elevated temperatures;Philosophical Magazine A;1981-12
3. Lattice Distortion Induced by Scratching on the Surface of Silicon Single Crystal Wafer;Japanese Journal of Applied Physics;1974-12
4. Distribution Patterns of Strain and Dislocations Around Indented Areas in Germanium Crystals as Observed by X‐Ray Topography;Journal of Applied Physics;1971-01
5. Dislocation etch pits in vanadium carbide monocrystals;Philosophical Magazine;1970-08
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