Hall Mobility in Chemically Deposited Polycrystalline Silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1659780
Reference16 articles.
1. Silicon gate technology
2. A new technology for high-power IC
3. The Potentials of Infinite Systems of Sources and Numerical Solutions of Problems in Semiconductor Engineering
4. Further Verification of a Model for Diffusion from Doped Oxides
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