Stability of the tungsten diselenide and silicon carbide heterostructure against high energy proton exposure-Reference-Cited by-同舟云学术

Stability of the tungsten diselenide and silicon carbide heterostructure against high energy proton exposure

Published:2017-10-02 Issue:14 Volume:111 Page:143104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Walker Roger C.¹^ORCID,Shi Tan²,Jariwala Bhakti¹,Jovanovic Igor²,Robinson Joshua A.¹

Affiliation:

1. Department of Materials Science and Engineering, Center for Two-Dimensional and Layered Materials, Penn State University, University Park, Pennsylvania 16802, USA

2. Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, Michigan 48109, USA

Funder

Defense Threat Reduction Agency (DTRA)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4993931

Reference41 articles.

1. Electrochemical Solar Cell Based on the d-Band Semiconductor Tungsten-Diselenide

2. Recent Advances in Two-Dimensional Materials beyond Graphene

3. Electronic structure ofWSe2: A combined photoemission and inverse photoemission study

4. Surface Analysis of WSe2 Crystals: Spatial and Electronic Variability

5. Single crystalline GaSe/WSe2heterointerfaces grown by van der Waals epitaxy. II. Junction characterization

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