Room-temperature operation of a memory-effect AlGaAs/GaAs heterojunction field-effect transistor with self-assembled InAs nanodots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126065
Reference5 articles.
1. Optically induced bistability in the mobility of a two-dimensional electron gas coupled to a layer of quantum dots
2. Trapping of photogenerated carriers by InAs quantum dots and persistent photoconductivity in novel GaAs/n-AlGaAs field-effect transistor structures
3. Characteristics of InAs/AlGaAs self-organized quantum dot modulation doped field effect transistors
4. Self-Assembling Molecular Beam Epitaxial Growth of the InAs Quantum Dots Embedded in Deep Al0.5Ga0.5As Barriers
5. Enhancement-Mode High Electron Mobility Transistors for Logic Applications
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3. Hysteretic capacitance-voltage characteristics of self-assembled quantum dots far from equilibrium with their environment;Physical Review B;2021-11-29
4. Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots;Journal of Nanomaterials;2019-04-28
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