Vacancy ordering of Ga2Se3 at GaSe/GaAs(100) interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122054
Reference20 articles.
1. Anomalous anisotropy in the absorption coefficient of vacancy-ordered Ga2Se3
2. Crystal structure and interatomic distances in GaSe
3. Über die Kristallstrukturen von Ga2S3, Ga2Se3und Ga2Te3
4. Optical Anisotropy of Vacancy-Ordered Ga2Se3Grown by Molecular Beam Epitaxy
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