Ion bombardment control of morphology during the growth of hydrogenated amorphous silicon thin films by reactive ion beam deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93756
Reference5 articles.
1. Microstructure of plasma‐deposited a‐Si : H films
2. Growth morphology and defects in plasma-deposited a-Si:H films
3. A doping‐precipitated morphology in plasma‐depositeda‐Si:H
4. Summary Abstract: Ion beam deposition of hydrogenated amorphous silicon films
5. New precision technique for measuring the concentration versus depth of hydrogen in solids
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2. Smooth Surface Morphology of Hydrogenated Amorphous Silicon Film Prepared by Plasma Enhanced Chemical Vapor Deposition;Plasma Science and Technology;2009-10
3. Polycrystalline Silicon and Silicon-Germanium Films for Advanced Microelectronics;IETE Journal of Research;1997-03
4. Microstructural and electrical characterisation of ion-beam-sputtered polysilicon films for microelectronic applications;Thin Solid Films;1993-11
5. The Effect of Ejection Angle in Ion-Beam Sputter Deposition of Superconducting Amorphous Beryllium Film;Japanese Journal of Applied Physics;1990-03-20
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