Direct determination of free exciton binding energy from phonon-assisted luminescence spectra in GaN epilayers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1514391
Reference13 articles.
1. Basic III–V nitride research – past, present and future
2. Excitonic recombination in GaN grown by molecular beam epitaxy
3. Exciton fine structure in undoped GaN epitaxial films
4. Binding energy for the intrinsic excitons in wurtzite GaN
5. Ground and excited state exciton spectra from GaN grown by molecular‐beam epitaxy
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