Design of low bias voltage Ge/SiGe multiple quantum wells electro-absorption modulator at 1550 nm-Reference-Cited by-同舟云学术

Design of low bias voltage Ge/SiGe multiple quantum wells electro-absorption modulator at 1550 nm

Published:2017-03 Issue:3 Volume:7 Page:035317
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Gao Jianfeng¹,Zhou Heng¹,Jiang Jialin¹,Zhou Yang¹,Sun Junqiang¹

Affiliation:

1. Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, Hubei, China

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4979333

Reference36 articles.

1. 125 Gbit/s carrier-injection-based silicon micro-ring silicon modulators

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3. 50-Gb/s ring-resonator-based silicon modulator

4. High-speed optical modulation based on carrier depletion in a silicon waveguide

5. Low V_pp, ultralow-energy, compact, high-speed silicon electro-optic modulator

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