InGaAs-InP core–shell nanowire/Si junction for vertical tunnel field-effect transistor
Author:
Affiliation:
1. Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9, Sapporo 060-0814, Japan
2. Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, North 13 West 8, Sapporo 060-0813, Japan
Funder
Japan Society for the Promotion of Science
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0014565
Reference34 articles.
1. Low-Voltage Tunnel Transistors for Beyond CMOS Logic
2. Tunnel field-effect transistors as energy-efficient electronic switches
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4. Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
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