Electron transport and electron energy distributions within the wurtzite and zinc-blende phases of indium nitride: Response to the application of a constant and uniform electric field-Reference-Cited by-同舟云学术

Electron transport and electron energy distributions within the wurtzite and zinc-blende phases of indium nitride: Response to the application of a constant and uniform electric field

Published:2015-03-28 Issue:12 Volume:117 Page:125705
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Siddiqua Poppy¹,Hadi Walid A.¹,Salhotra Amith K.¹,Shur Michael S.²^ORCID,O'Leary Stephen K.¹

Affiliation:

1. School of Engineering, The University of British Columbia, 3333 University Way, Kelowna, British Columbia V1V 1V7, Canada

2. Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180-3590, USA

Funder

Natural Sciences and Engineering Research Council of Canada (Conseil de Recherches en Sciences Naturelles et en Génie du Canada)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4915329

Reference40 articles.

1. Unusual properties of the fundamental band gap of InN

2. Longitudinal polar optical phonons in InN/GaN single and double het- erostructures

3. Electron cyclotron effective mass in indium nitride

4. High-field transport in wide-band-gap semiconductors

5. Electron mobility limited by scattering from screened positively charged dislocation lines within indium nitride

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