Density of states of amorphous In-Ga-Zn-O from electrical and optical characterization
Author:
Affiliation:
1. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA
2. School of Electrical Engineering, Kookmin University, 861-1 Jeongneung-dong, Seongbuk-gu, Seoul 136-702, South Korea
Funder
BK21+ with the Educational Research Team for Creative Engineers on Material-Device-Circuit Co-Design
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4898567
Reference29 articles.
1. Hydrogenated Amorphous Silicon Thin-Film Transistors
2. Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states
3. Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy
4. Electronic structure of oxygen deficient amorphous oxide semiconductor a-InGaZnO4-x: Optical analyses and first-principle calculations
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