Improved electrical properties of Ge metal-oxide-semiconductor devices with HfO2 gate dielectrics using an ultrathin GeSnOx film as the surface passivation layer-Reference-Cited by-同舟云学术

Improved electrical properties of Ge metal-oxide-semiconductor devices with HfO2 gate dielectrics using an ultrathin GeSnOx film as the surface passivation layer

Published:2013-04-08 Issue:14 Volume:102 Page:142906
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhao Mei,Liang Renrong,Wang Jing,Xu Jun

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4800228

Reference14 articles.

1. High-k/Ge MOSFETs for future nanoelectronics

2. Germanium channel MOSFETs: Opportunities and challenges

3. Microstructure and thermal stability of HfO2 gate dielectric deposited on Ge(100)

4. High-Electron-Mobility $\hbox{Ge/GeO}_{2}$ n-MOSFETs With Two-Step Oxidation

5. Scalability and Electrical Properties of Germanium Oxynitride MOS Dielectrics

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