The variation of residual impurities in ZnSe crystals used in light‐emitting diode fabrications
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.330540
Reference10 articles.
1. Near Band‐Edge Luminescence in ZnSe Grown from Gallium Solution
2. Shallow acceptors andp‐type ZnSe
3. Donor-acceptor pair bands in ZnSe
4. Are impurities the cause of ’’self’’‐compensation in large‐band‐gap semiconductors?
5. Pair Spectra and the Shallow Acceptors in ZnSe
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