Understanding of the excess channel noise in InAlAs∕InGaAs∕InP high electron mobility transistors in impact ionization regime
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2711376
Reference14 articles.
1. Temperature-dependent small-signal and noise parameter measurements and modeling on InP HEMTs
2. Investigation and modeling of impact ionization with regard to the RF and noise behavior of HFET
3. Kink-effect related noise in short-channel InAlAs/InGaAs high electron mobility transistors
4. A linear dependence of F/sub min/ on frequency for TET's
5. Influence of kink effect on noise measurements in InP substrate PHEMTs at microwave frequencies
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO2 as a Gate Dielectric;Materials;2016-10-25
2. Improved Impact Ionization in AlGaAs/InGaAs PHEMT with a Liquid Phase Deposited SiO2as the Gate Dielectric;ECS Journal of Solid State Science and Technology;2012-11-30
3. Bias-Dependent Radio Frequency Performance for 40 nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600 GHz;Japanese Journal of Applied Physics;2012-11-01
4. Bias-Dependent Radio Frequency Performance for 40 nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600 GHz;Japanese Journal of Applied Physics;2012-10-25
5. Improved microwave and noise performance of InAlAs/InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate without gate recess;Applied Physics Letters;2010-05-17
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