Hole mobility enhancement by double-gate mode in ultrathin-body silicon-on-insulator p-type metal-oxide-semiconductor field-effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3182792
Reference16 articles.
1. Fundamental limitations in microelectronics—I. MOS technology
2. 25 nm CMOS Omega FETs
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1. Back-Gate Modulation in UTB GeOI pMOSFETs With Advanced Substrate Fabrication Technique;IEEE Transactions on Electron Devices;2018-03
2. Impact of back-gate biasing on effective field and mobility in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect-transistors;Journal of Applied Physics;2013-04-14
3. Experimental and Analytical Characterization of Dual-Gated Germanium Junctionless p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors;Japanese Journal of Applied Physics;2012-04-20
4. Experimental and Analytical Characterization of Dual-Gated Germanium Junctionless p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors;Japanese Journal of Applied Physics;2012-04-01
5. Mobility Enhancement by Back-Gate Biasing in Ultrathin SOI MOSFETs With Thin BOX;IEEE Electron Device Letters;2012-03
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