Practical limits of high-voltage thyristors on wide band-gap materials
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1326853
Reference24 articles.
1. Optimum semiconductors for high-power electronics
2. SiC and GaN bipolar power devices
3. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
4. Steady-state and transient forward current-voltage characteristics of 4H-silicon carbide 5.5 kV diodes at high and superhigh current densities
5. High voltage GaN Schottky rectifiers
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