Effects of patterning induced stress relaxation in strained SOI/SiGe layers and substrate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3597641
Reference31 articles.
1. Fundamentals of silicon material properties for successful exploitation of strain engineering in modern CMOS manufacturing
2. Enhanced CMOS performances using substrate strained-SiGe and mechanical strained-Si technology
3. Mobility-enhancement technologies
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3. Room-temperature direct band-gap electroluminescence from germanium (111)-fin light-emitting diodes;Japanese Journal of Applied Physics;2017-02-07
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