Kinetics of the generation and annealing of deep defects and recombination centers in amorphous silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99937
Reference17 articles.
1. Reversible conductivity changes in discharge‐produced amorphous Si
2. Kinetics of the Staebler–Wronski effect in hydrogenated amorphous silicon
3. Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study
4. Study of light-induced metastable defects by means of temperature-modulated space-charge-limited currents
5. The influence of spin defects on recombination and electronic transport in amorphous silicon
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