The effect of interlevel dielectric on the critical tensile stress to void nucleation for the reliability of Cu interconnects
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1787139
Reference16 articles.
1. Electromigration in Cu interconnects with very different grain structures
2. Reduced electromigration of Cu wires by surface coating
3. 41st Annual International Reliability Physics Symposium;von Glasow A.,2003
4. Stress generation by electromigration
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