Computer simulation of high‐resolution transmission electron microscopy images of Si/SiO2interfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336959
Reference9 articles.
1. Effect of the phase shift due to dynamical scattering on the contrast of crystal structure images
2. The effect of amorphous surface layers on images of crystals in high resolution transmission electron microscopy
3. Analysis of the Si-ON-Insulator Structure by Modeling of the Interface Atomic Arrangement
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1. Crystalline-Vitreous Interface in Two Dimensional Silica;Physical Review Letters;2012-09-06
2. Consequences of nonstochiometric SiOx interfacial layers on the electrical characterization of metal-oxide-semiconductor devices;Journal of Applied Physics;2007-02
3. Atomic structure of the interface between silicon (111) and amorphous germanium;Physical Review B;2004-11-08
4. Atomistic structure of SiO2∕Si∕SiO2 quantum wells with an apparently crystalline silicon oxide;Journal of Applied Physics;2004-09-15
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