Photoluminescence characterization of Cu2Sn1-xGexS3 bulk single crystals
Author:
Affiliation:
1. Department of Electrical, Electronics and Information Engineering, Nagaoka University of Technology, 1603-1, Kamitomioka, Nagaoka, Niigata 940-2188, Japan
Funder
Nagaoka University of Technology
Japan Society for the Promotion of Science
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5050033
Reference30 articles.
1. Effects of heavy alkali elements in Cu(In,Ga)Se 2 solar cells with efficiencies up to 22.6%
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3. Temperature dependent photoreflectance study of Cu2SnS3 thin films produced by pulsed laser deposition
4. Fabrication of Cu2GeS3-based thin film solar cells by sulfurization of Cu/Ge stacked precursors
5. Dielectric function and double absorption onset of monoclinic Cu 2 SnS 3 : Origin of experimental features explained by first-principles calculations
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1. Electrical transport properties of Cu2Sn1-Ge S3 films with varying x ratios;Thin Solid Films;2024-08
2. Effect of Ge inclusion on surface morphologies and the growth mechanism of Cu2(Sn1-xGex)S3 films grown by the sulfurization of Ge/Cu/SnS precursors;Thin Solid Films;2024-07
3. Fabrication of Cu2Sn1-xGexS3 Thin-Film Solar Cells via Sulfurization of Cu2GeS3/Cu2SnS3 Stacked Precursors;Materials;2024-04-19
4. Effect of cover annealing on Cu2SnS3 thin films deposited by dual-source fine-channel mist chemical vapor deposition;Journal of Materials Science: Materials in Electronics;2023-08-31
5. Photoluminescence properties of Cu-poor Cu2Sn1− x Ge x S3 thin films with varying Ge/(Ge+Sn) ratio;Journal of Physics D: Applied Physics;2023-04-24
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