Shubnikov–de Haas Effect in InGaSb/InAs superlattices
Author:
Affiliation:
1. Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson Air Force Base, Ohio 45433, USA
2. Department of Physics, University of Dayton, Dayton, Ohio 45469, USA
Funder
DOD | U.S. Air Force
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5010293
Reference19 articles.
1. Advances in mid-infrared detection and imaging: a key issues review
2. Two-dimensional electronic structure in InAs-GaSb superlattices
3. Proposal for strained type II superlattice infrared detectors
4. Observation of semiconductor‐semimetal transition in InAs‐GaSb superlattices
5. Electron transport in InAs/Ga1-xInxSb superlattices
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1. Exploring transient modification of hyperbolic metamaterials using InAsSb-based semiconductor;Quantum Nanophotonic Materials, Devices, and Systems 2023;2023-09-28
2. Engineering transient hyperbolic metamaterials using InAsSb-based semiconductor;AIP Advances;2021-07-01
3. Correlation Between Bands Structure and Quantum Magneto Transport Properties in InAs/GaxIn1−xSb Type II Superlattice for Infrared Detection;Frontiers in Physics;2020-03-18
4. Carrier reduction studies of type-II superlattice materials for very long wavelength infrared sensing;Journal of Applied Physics;2019-01-14
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