Temperature dependence of Raman scattering in hexagonal indium nitride films-Reference-Cited by-同舟云学术

Temperature dependence of Raman scattering in hexagonal indium nitride films

Published:2005-08 Issue:3 Volume:98 Page:033527
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Pu X. D.,Chen J.,Shen W. Z.,Ogawa H.,Guo Q. X.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2006208

Reference28 articles.

1. Indium nitride (InN): A review on growth, characterization, and properties

2. Optical band gap of indium nitride

3. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap

4. Unusual properties of the fundamental band gap of InN

5. K. S. A. Butcher, Preface for the Proceedings of the First International Indium Nitride Workshop, Fremantle, Australia, 16–20 November 2003 [J. Cryst. GrowthJCRGAE0022-0248 269, 7 (2004)].

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