Thermally assisted-writing giant magnetoresistance with perpendicular magnetization
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1851954
Reference9 articles.
1. Low-current blocking temperature writing of double barrier magnetic random access memory cells
2. Design of Curie point written magnetoresistance random access memory cells
3. Geometry dependence of magnetization vortices in patterned submicron NiFe elements
4. Switching characteristics and magnetization vortices of thin-film cobalt in nanometer-scale patterned arrays
5. Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory
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