Comparison of morphology evolution of Ge(001) homoepitaxial films grown by pulsed laser deposition and molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2108115
Reference25 articles.
1. Ehrlich-Schwoebel instability in molecular-beam epitaxy: A minimal model
2. Epitaxial Si(001) grown at 80–750 °C by ion‐beam sputter deposition: Crystal growth, doping, and electronic properties
3. Low-temperature growth morphology of singular and vicinal Ge(001)
4. Mechanism for epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy
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