Electronic state of Er in sputtered AlN:Er films determined by magnetic measurements
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4903553
Reference21 articles.
1. Recent developments in rare-earth doped materials for optoelectronics
2. 1.54‐μm photoluminescence from Er‐implanted GaN and AlN
3. Dependence of performance of saturated in-line erbium-doped fiber amplifiers on pump wavelength around 1480 nm
4. Visible cathodoluminescence of Er-doped amorphous AlN thin films
5. Multiple color capability from rare earth-doped gallium nitride
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