Structural and electrical properties of epitaxial Bi2Se3 thin films grown by hybrid physical-chemical vapor deposition-Reference-Cited by-同舟云学术

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Structural and electrical properties of epitaxial Bi2Se3 thin films grown by hybrid physical-chemical vapor deposition

Published:2012-04-16 Issue:16 Volume:100 Page:162110
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Brom Joseph E.,Ke Yue,Du Renzhong,Won Dongjin,Weng Xiaojun,Andre Kalissa,Gagnon Jarod C.,Mohney Suzanne E.,Li Qi,Chen Ke,Xi X. X.,Redwing Joan M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4704680

Reference15 articles.

1. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

2. The next generation

3. Conduction band splitting and transport properties of Bi2Se3

4. Quintuple-layer epitaxy of thin films of topological insulator Bi2Se3

5. Topological Insulator Nanowires and Nanoribbons

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