Bandgap modulation and phase boundary region of multiferroic Gd, Co co-doped BiFeO3 thin film

Abstract

Ferroelectric polarization is a crucial factor to induce photovoltaic effect in ferroelectric materials. Here, a novel modulation of bandgap by Gd and Co co-doped BFO is found for a polycrystalline Bi0.9Gd0.1Fe0.85Co0.15O3 thin film prepared by the sol–gel process. The ferroelectric properties, magnetic properties, and bandgap of the BFO films were altered by doping Gd and Co. This work has led to a greater understanding of bismuth ferrate, and it proposes the Bi0.9Gd0.1Fe0.85Co0.15O3 thin film for the possibility of better preparation of high conversion efficiency ferroelectric photovoltaic devices.