Milliwatt power 233 nm AlGaN-based deep UV-LEDs on sapphire substrates-Reference-Cited by-同舟云学术

Milliwatt power 233 nm AlGaN-based deep UV-LEDs on sapphire substrates

Published:2020-09-14 Issue:11 Volume:117 Page:111102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lobo-Ploch Neysha¹²^ORCID,Mehnke Frank³^ORCID,Sulmoni Luca³^ORCID,Cho Hyun Kyong¹^ORCID,Guttmann Martin³^ORCID,Glaab Johannes¹^ORCID,Hilbrich Katrin¹,Wernicke Tim³^ORCID,Einfeldt Sven¹^ORCID,Kneissl Michael¹³^ORCID

Affiliation:

1. Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany

2. UVphotonics NT GmbH, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany

3. Institute of Solid State Physics, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany

Funder

Deutsche Forschungsgemeinschaft

Bundesministerium für Bildung und Forschung

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0015263

Reference20 articles.

1. The emergence and prospects of deep-ultraviolet light-emitting diode technologies

2. Gas Sensing of Nitrogen Oxide Utilizing Spectrally Pure Deep UV LEDs

3. DOAS for flue gas monitoring—I. Temperature effects in the U.V./visible absorption spectra of NO, NO2, SO2 and NH3

4. Identification of Chemical Forms of Lead, Cadmium and Nickel in Sewage Sludge of Waste Water Treatment Facilities

5. Ultraviolet multiwavelength absorptiometry (UVMA) for the examination of natural waters and wastewaters

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